2016.09-2018.07  韶关学院

2022.08至今  无锡学院

[1] Jianyang Deng, Rui Li ,Yanan Guo, Junxi Wang, Chengxin Wang and Ziwu Ji. Deep localization features of photoluminescence in narrow AlGaN quantum wells[J]. Optoelectronics Letters, 2024, 20(12):736-740

[2] Kaiju Shi, Chengxin Wang, Rui Li, Jianyang Deng, Haofeng Sun, Xiangang Xu and Ziwu Ji. Influence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells.Micro and nanostructures, 2023(May):177.

[3] Rui Li, Chengxin Wang, Kaiju Shi, Changfu Li, Shangda Qu, Xiangang Xu and Ziwu Ji, Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN, J. Lumines. 2022, 244, 118741.

[4] Rui Li, Chengxin Wang, Kaiju Shi, Zonghao Wu, Jianyang Deng, Changfu Li, Mingsheng Xu, Xiangang Xu and Ziwu Ji, Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures, Micro and Nanostructures.2022, 165, 207211

[5] 时凯居, 李睿, 李长富, 王成新, 徐现刚, 冀子武. 荧光法测定半导体禁带宽度. 物理学报, 2022, 71(06): 405-411.

[6] Rui Li, Mingsheng Xu, Peng Wang, Chengxin Wang, Shangda Qu, Kaiju Shi, Yehui Wei, Xiangang Xu, and Ziwu Ji. Combined effects of the carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with a high In content, Chin. Phys. B 2021, 30, 047801.

[7] Rui Li, Chengxin Wang, Mingsheng Xu, Mingsheng Xu, Shangda Qu, Kaiju Shi, Changfu Li, Xiangang Xu and Ziwu Ji. Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures, Superlattices Microstruct. 2021, 160, 107090.

[8] Kaiju Shi, Chengxin Wang, Rui Li, Shangda Qu, Zonghao Wu, Ziwu Ji. Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells.Materials Express, 2021, 11, 12.

[9] 李睿，罗凤珍，罗欢等. 稀土掺杂Sr5(PO4)2SiO4发光材料的制备工艺研究, 人工晶体学报, 2017, 46, 2203.

李睿，龚新勇，崔瑞瑞等. Eu2+掺杂Sr5(PO4)2SiO4磷灰石荧光粉的发光性能研究, 光电子▪激光, 2016, 27, 45.